pa1901 description the pa1901 is a switching device, which can be driven directly by a 2.5 v power source. this device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features ? 2.5 v drive available ? low on-state resistance r ds(on)1 = 39 m ? max. (v gs = 4.5 v, i d = 3.5 a) r ds(on)2 = 40 m ? max. (v gs = 4.0 v, i d = 3.5 a) r ds(on)3 = 54 m ? max. (v gs = 2.5 v, i d = 3.5 a) ordering information part number package pa1901te sc-95 (mini mold thin type) marking : tq absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 30 v gate to source voltage (v ds = 0 v) v gss 12 v drain current (dc) (t a = 25c) i d(dc) 6.5 a drain current (pulse) note1 i d(pulse) 26 a total power dissipation p t1 0.2 w total power dissipation note2 p t2 2.0 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on fr-4 board, t 5 sec. package drawing (unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 2.8 0.2 1.5 0.95 123 654 1.9 2.9 0.2 0.32 +0.1 ?0.05 0.95 0.65 +0.1 ?0.15 1 , 2, 5, 6 : drain 3 : gate 4 : source equivalent circuit source body diode gate protection diode gate drain product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 10 a gate leakage current i gss v gs = 12 v, v ds = 0 v 10 a gate to source cut-off voltage v gs(off) v ds = 10 v, i d = 1.0 ma 0.5 1.0 1.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 3.5 a 3.0 7.9 s drain to source on-state resistance r ds(on)1 v gs = 4.5 v, i d = 3.5 a 31 39 m ? r ds(on)2 v gs = 4.0 v, i d = 3.5 a 32 40 m ? r ds(on)3 v gs = 2.5 v, i d = 3.5 a 40 54 m ? input capacitance c iss v ds = 10 v 470 pf output capacitance c oss v gs = 0 v 100 pf reverse transfer capacitance c rss f = 1.0 mhz 60 pf turn-on delay time t d(on) v dd = 10 v, i d = 3.5 a 35 ns rise time t r v gs = 4.0 v 110 ns turn-off delay time t d(off) r g = 10 ? 170 ns fall time t f 130 ns total gate charge q g v dd = 24 v 5.4 nc gate to source charge q gs v gs = 4.0 v 1.1 nc gate to drain charge q gd i d = 6.5 a 2.4 nc diode forward voltage v f(s-d) i f = 6.5 a, v gs = 0 v 0.9 v test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 ? d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com pa1901 product specification
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